Thermal Ramp Type of Photo-Thermal Excitation in Hall Current and Variable Thermal Conductivity of Semiconductor Elastic Material

In this article, the variable thermal conductivity which it depending on temperature gradient in context of the photothermal excitation process of a semiconductor elastic material is studied. In the presence of Hall current effect the governing equations is introduced in one dimension subjected to thermal ramp type. The interaction between thermal-elastic-mechanical-plasma waves are used during the models of dual-phase-lag (DPL) and Lord-Shulman (LS) according to thermoelasticity theory. Laplace transform method in one dimension (1D) is used to get the solutions of physical fields quantities under investigation. The mechanical (which describe the case when the traction is free) and thermal ramp type at the free surface are applied through the photo-generated (recombination) transport processes due to the light energy absorption. The inversion of Laplace transform is used to observe the complete solution of physical quantities. The influence of Hall current, thermal memories with variable thermal conductivity are illustrated graphically and discussed on the resulting quantities.