Multiparticle states and Coulomb blockade in InAs/GaAs quantum dots

被引：12

作者：

Lelong, P ^{[1
]}

Heller, O ^{[1
]}

Bastard, G ^{[1
]}

机构：

[1] ENS, Phys Mat Condensee Lab, F-75005 Paris, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 2卷 / 1-4期

关键词：

quantum dot; electron states; Coulomb blockade; III-V semiconductors;

D O I：

10.1016/S1386-9477(98)00138-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

When quantum dots are embedded into a semiconductor capacitor structure the capacitance of the system exhibits peaks. We present a calculation of the peak splittings which takes into account the intra-dot Coulomb repulsion, which leads to a Coulomb blockade of the dot occupation, as well as the capacitor feed-back to the filling of the dots. A satisfactory comparison with the recent experimental findings (InAs dots in a GaAs capacitor) is obtained. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：678 / 681

页数：4

共 10 条

[1]

DEVORET MH, 1992, 13 NATO ASI SERIES B, V294

[2]

FRICKE M, 1996, P 2O INT C PHYS SEM, V2, P1609

[3] SPECIAL ISSUE ON SINGLE CHARGE TUNNELING [J].