Preparation and thermoelectric properties of novel Tellurium-based glassy semiconductors

被引：4
作者：
Zhang, Huan [1 ,2 ]
Zhang, Yaqi [1 ,2 ,3 ]
Yu, Pengfei [1 ,2 ]
Wang, Li-Min [1 ,2 ]
Li, Gong [1 ,2 ]
机构：
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
[2] Yanshan Univ, Coll Mat Sci & Engn, Qinhuangdao 066004, Hebei, Peoples R China
[3] Henan Inst Sci & Technol, Sch Mech & Elect Engn, Xinxiang 453003, Henan, Peoples R China
来源：
SCRIPTA MATERIALIA | 2021年 / 203卷
关键词：
Amorphous materials; Chalcogenid semiconductors; Telluride glasses; Thermoelectric materials; MECHANICAL-PROPERTIES; THERMAL-CONDUCTIVITY; PERFORMANCE; NANOCOMPOSITES;
D O I：
10.1016/j.scriptamat.2021.114038
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Vitrification of Tellurium-based(Te) chalcogenid semiconductors is explored as a new route to enhance their thermoelectric properties by maximizing the degree of structural disorder to produce the minimum thermal conductivity. Ga2Te3-SnTe systems are focused in this paper and the optimized glass-forming composition is identified. Complete bulk (Ga2Te3)(34)(SnTe)(66) glass is successfully prepared by a spark plasma sintering technique and exhibited an ultralow low thermal conductivity and high Seebeck coefficient. Together with the tunable electrical conductivity, the newly obtained Ga2Te3-SnTe glasses broaden the research scope of Te-based semiconductor glasses and also provide a new option for the development of high-performance thermoelectric materials. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页数：4
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