Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

被引：46

作者：

Hou, Zhipeng ^{[1
,2
]}

Wang, Yue ^{[1
]}

Xu, Guizhou ^{[1
]}

Zhang, Xiaoming ^{[1
]}

Liu, Enke ^{[1
]}

Wang, Wenquan ^{[2
]}

Liu, Zhongyuan ^{[3
]}

Xi, Xuekui ^{[1
]}

Wang, Wenhong ^{[1
]}

Wu, Guangheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China

[3] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 10期

基金：

中国国家自然科学基金;

关键词：

LINEAR MAGNETORESISTANCE; TOPOLOGICAL INSULATORS; OSCILLATIONS;

D O I：

10.1063/1.4914545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109% and high carrier mobility up to 2950 cm(2)/V s are experimentally observed at temperatures below 150 K. The low-field MR data show evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling. (C) 2015 AIP Publishing LLC.

引用

页数：4

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