Anisotropic optical gains in α-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown via pulsed-laser deposition

被引:2
作者
Lin, Ja-Hon [1 ]
Tsai, Tse-Ming [1 ]
Yang, Yi-Chung [1 ]
Liu, Wei-Rein [2 ]
Lin, Bi-Hsuan [2 ]
Uma, Kasimayan [1 ]
Wu, Yung-Chi [3 ]
Hsieh, Wen-Feng [3 ]
机构
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Natl Dept Photon, Hsinchu 300, Taiwan
关键词
ZnO; ZnMgO MQWs; Amplified spontaneous emission; Degree of polarization; Characteristic temperature; STIMULATED-EMISSION PROPERTIES; ZNO; EXCITONS; LUMINESCENCE; OSCILLATIONS; ZNO/(MG;
D O I
10.1016/j.apsusc.2021.150401
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High periodicity non-polar ten-pair ZnO/Zn0.8Mg0.2O multiple quantum wells (MQWs), with a binding energy of approximately 69.8 meV, on r-plane sapphire were prepared via pulsed-laser deposition. The a-plane ZnO/ Zn0.8Mg0.2O MQWs exhibit anisotropic optical properties, which demonstrate an energy difference of approximately 15 meV between the two splitting valence bands via photoluminescence measurement. Through the optical pump of the Q-switched laser, the amplified spontaneous emission (ASE) from both the side and surface normal of the non-polar MQWs shows a higher slope efficiency and gain coefficient under a perpendicular pump (Epic) than those under a parallel pump condition (Ep//c). Owing to the gain-guiding effect, the linealy polarized ASE from the side of the non-polar ZnO/Zn0.8Mg0.2O MQWs has been demonstrated with a degree of polarization (DOP) - 89 %. For the surface normal ASE, the P2 band emission from exciton-exciton (ex-ex) scattering is recognized as the dominant mechanism. Through the temperature-dependent ASE, the P band emission peak reveals an evident red shift as the temperature increases. Moreover, a higher characteristic temperature of - 124 K, which indicates the temperature-insensitive property, is obtained.
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页数:8
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