Plasmonic Superlensing in Doped GaAs

被引：50

作者：

Fehrenbacher, Markus ^{[1
,2
]}

Winnerl, Stephan ^{[1
]}

Schneider, Harald ^{[1
]}

Doering, Jonathan ^{[2
]}

Kehr, Susanne C. ^{[2
]}

Eng, Lukas M. ^{[2
]}

Huo, Yongheng ^{[3
]}

Schmidt, Oliver G. ^{[3
]}

Yao, Kan ^{[4
]}

Liu, Yongmin ^{[4
]}

Helm, Manfred ^{[1
,2
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[2] Tech Univ Dresden, Inst Angew Phys, D-01062 Dresden, Germany

[3] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[4] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

关键词：

Superlens; diffraction limit; surface plasmons; near-field microscopy; semiconductor; FIELD OPTICAL MICROSCOPY; PEROVSKITE-BASED SUPERLENSES; SILVER SUPERLENS; SPECTROSCOPY; LENS; RESOLUTION; SILICON;

D O I：

10.1021/nl503996q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around lambda = 20 mu m, adjustable by changing the doping concentration. In our experiments, gold stripes below the GaAs superlens are imaged with a lambda/6 subwavelength resolution by an apertureless near-field optical microscope utilizing infrared radiation from a free-electron laser. The resonant behavior of the observed superlensing effect is in excellent agreement with simulations based on the Drude-Lorentz model. Our results demonstrate a rather simple superlens implementation for infrared nanospectroscopy.

引用

页码：1057 / 1061

页数：5

共 31 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[2]

Born M., 1999, Principles of optics, Vseventh

[3] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J].

BRICE, DK .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :103-&

[4] Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems [J].

Buchwald, Walter R. ;

Cleary, Justin W. ;

Hendrickson, Joshua .

APPLIED PHYSICS LETTERS, 2012, 100 (05)

[5] Superlens based on metal-dielectric composites [J].

Cai, WS ;

Genov, DA ;

Shalaev, VM .

PHYSICAL REVIEW B, 2005, 72 (19)

[6] Planar metal plasmon waveguides: frequency-dependent dispersion, propagation, localization, and loss beyond the free electron model [J].

Dionne, JA ;

Sweatlock, LA ;

Atwater, HA ;

Polman, A .

PHYSICAL REVIEW B, 2005, 72 (07)

[7] Sub-diffraction-limited optical imaging with a silver superlens [J].

Fang, N ;

Lee, H ;

Sun, C ;

Zhang, X .

SCIENCE, 2005, 308 (5721) :534-537

[8] Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices [J].

Huber, A. J. ;

Keilmann, F. ;

Wittborn, J. ;

Aizpurua, J. ;

Hillenbrand, R. .

NANO LETTERS, 2008, 8 (11) :3766-3770

[9] Intersublevel Spectroscopy on Single InAs-Quantum Dots by Terahertz Near-Field Microscopy [J].

Jacob, Rainer ;

Winnerl, Stephan ;

Fehrenbacher, Markus ;

Bhattacharyya, Jayeeta ;

Schneider, Harald ;

Wnezel, Marc Tobias ;

von Ribbeck, Hans-Georg ;

Eng, Lukas M. ;

Atkinson, Paola ;

Schmidt, Oliver G. ;

Helm, Manfred .

NANO LETTERS, 2012, 12 (08) :4336-4340

[10] Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy [J].

Jacob, Rainer ;

Winnerl, Stephan ;

Schneider, Harald ;

Helm, Manfred ;

Wenzel, Marc Tobias ;

von Ribbeck, Hans-Georg ;

Eng, Lukas M. ;

Kehr, Susanne C. .

OPTICS EXPRESS, 2010, 18 (25) :26206-26213

← 1 2 3 4 →