Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

被引：5
作者：
Lee, KH
Lee, JY
Lee, DU
Kim, TW
Lee, HS
Kim, MD
机构：
[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Kyungpook Natl Univ, Dept Mat Sci & Met, Taegu 702701, South Korea
[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
来源：
SOLID STATE COMMUNICATIONS | 2005年 / 133卷 / 01期
关键词：
nanostructures; crystal growth; transmission electron microscopy; optical properties;
D O I：
10.1016/j.ssc.2004.08.010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investi2ated using transmission electron microscopy (TEM) and photolurninescence (PL) measurement. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 6-50degreesC. When the InAs/GaAs QDs were annealed at 700 degreesC, while the lateral size of the InAs QDs increased. their density decreased. The InAs QDs disappeared at 800 degreesC. PL spectra showed that the peaks corresponding to the interband transitions of the InAS QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can he modified due to postgrowth thermal annealing. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：65 / 70
页数：6
相关论文
共 18 条
[1]   Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap [J].
Babinski, A ;
Jasinski, J ;
Bozek, R ;
Szepielow, A ;
Baranowski, JM .
APPLIED PHYSICS LETTERS, 2001, 79 (16) :2576-2578
[2]   Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots [J].
Chu, L ;
Arzberger, M ;
Zrenner, A ;
Böhm, G ;
Abstreiter, G .
APPLIED PHYSICS LETTERS, 1999, 75 (15) :2247-2249
[3]   Evolution of the energy levels in quantum dot ensembles with different densities [J].
Fafard, S ;
Wasilewski, ZR ;
Spanner, M .
APPLIED PHYSICS LETTERS, 1999, 75 (13) :1866-1868
[4]  
Frechengues S, 1997, APPL PHYS LETT, V71, P2818, DOI 10.1063/1.120145
[5]   Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing [J].
Hsu, TM ;
Lan, YS ;
Chang, WH ;
Yeh, NT ;
Chyi, JI .
APPLIED PHYSICS LETTERS, 2000, 76 (06) :691-693
[6]   In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K [J].
Jiang, L ;
Li, SS ;
Yeh, NT ;
Chyi, JI ;
Ross, CE ;
Jones, KS .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1986-1988
[7]   Photoluminescence and time-resolved photoluminescence characteristics of InxGa((1-x))As/GaAs self-organized single- and multiple-layer quantum dot laser structures [J].
Kamath, K ;
Chervela, N ;
Linder, KK ;
Sosnowski, T ;
Jiang, HT ;
Norris, T ;
Singh, J ;
Bhattacharya, P .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :927-929
[8]   Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures [J].
Kim, TW ;
Lee, DU ;
Choo, DC ;
Kim, HJ ;
Lee, HS ;
Lee, JY ;
Kim, MD .
APPLIED PHYSICS LETTERS, 2001, 79 (01) :33-35
[9]   Effect of thermal annealing on the microstructural and optical properties of vertically stacked InAs/GaAs quantum dots embedded in modulation-doped heterostructures [J].
Lee, HS ;
Lee, JY ;
Kim, TW ;
Kim, MD .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6354-6357
[10]   Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots [J].
Lee, HS ;
Lee, JY ;
Kim, TW ;
Choo, DC ;
Kim, MD ;
Seo, SY ;
Shin, JH .
JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) :63-68
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