Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes

被引：1
作者：
Taser, A. [1 ]
Orhan, Z. [1 ]
Aykac, C. [1 ]
Ozakin, O. [1 ]
Guzeldir, B. [1 ]
Saglam, M. [1 ]
机构：
[1] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey
来源：
MATERIALS TODAY-PROCEEDINGS | 2021年 / 46卷
关键词：
Au-Cu alloys; Schottky diodes; Effects of Aging; Cheung and Norde method;
D O I：
10.1016/j.matpr.2021.03.270
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, it is aimed to produce Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes and to calculate the diode parameters such as ideality factor, barrier height and series resistance by using timedependent current-voltage (I-V) measurements. First, pure Ti metal was evaporated on the matt surface of the n-Si semiconductors and annealed at 420 degrees C in nitrogen atmosphere. Secondly, Au and Cu metals and AuCu alloy were evaporated on the other surface of n-Si semiconductors. So, Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes were obtained. Finally, I-V measurements of the Schottky diodes were taken at specified time intervals (immediately,1, 7, 15, 30, 90, 180 and 365 days) and time-dependent diode parameters were calculated using the Thermionic Emission, Cheung and Norde methods. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.
引用
收藏
页码：6954 / 6959
页数：6
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