Heterostructures GexSi1-x/Si as a material for solar cells

被引：0

作者：

Sheregii, EM ^{[1
]}

Pociask, MM ^{[1
]}

Tomaka, G ^{[1
]}

Kakol, T ^{[1
]}

Pociask, MA ^{[1
]}

机构：

[1] Pedag Univ, Inst Phys, PL-35310 Rzeszow, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2000年 / 8卷 / 04期

关键词：

GexSi1-x/Si; heterostructure; modelling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In Ge-Si heterostructure system, sb-ain and compositional changes call be used to change the fundamental indirect absorption edge. It is well known that increase in Ge content in the GexSi1-x shifts fundamental band edge to the longer wave-lengths and causes strong ina ease in absorption coefficient. Theoretical description of increase in efficiency of solar cells based on this system in comparison with the silicon solar cells is given. A construction of photodiodes using heterostructure Ge0.2Si0.8/Si is proposed.

引用

页码：350 / 352

页数：3