Nonradiative processes involving rare-earth impurities in nanostructures

被引：1
|
作者：
Langer, JM
Sokolov, NS
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期
基金：
俄罗斯基础研究基金会;
关键词：
autoionization; nonradiative processes; nanostructures; surface recombination;
D O I：
10.1016/S0921-5107(00)00700-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Doping nanostructures with rare earth (RE) impurities offers a new way of engineering light emitting devices (LED). However, the proximity of interfaces opens new channels of nonradiative processes detrimental for the operation of LEDs. Here we discuss the influence of host band-structure on nonradiative processes at surfaces, as well as the RE autoionization across the interface. The effect of a spatial confinement on the radiative processes is also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：46 / 51
页数：6
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