Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

被引：33
作者：
Zhang, Dingbo [1 ,2 ]
Zhou, Zhongpo [1 ,2 ]
Wang, Haiying [1 ,2 ]
Yang, Zongxian [1 ,2 ]
Liu, Chang [3 ,4 ]
机构：
[1] Henan Normal Univ, Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China
[2] Henan Normal Univ, Sch Phys & Mat Sci, Xinxiang 453007, Peoples R China
[3] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Hubei, Peoples R China
[4] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2018年 / 13卷
关键词：
alpha-GeTe; Bilayer; First-principle calculations; Electric properties; PHASE-CHANGE MATERIALS;
D O I：
10.1186/s11671-018-2813-x
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Based on first-principle calculations, the stability, electronic structure, optical absorption, and modulated electronic properties by different interlayer distances or by external electric fields of bilayer -GeTe are systemically investigated. Results show that van der Waals (vdW) bilayer -GeTe has an indirect band structure with the gap value of 0.610eV, and -GeTe has attractively efficient light harvesting. Interestingly, along with the decrease of interlayer distances, the band gap of bilayer -GeTe decreases linearly, due to the enhancement of interlayer vdW interaction. In addition, band gap transition is originated from the electric field-induced near free-electron gas (NFEG) under the application of positive electrical fields. However, when the negative electric fields are applied, there is no NFEG. On account of these characteristics of bilayer -GeTe, a possible data storage device has been designed. These results indicate that bilayer -GeTe has a potential to work in new electronic and optoelectronic devices.
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页数：8
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