Microstructure and growth mechanism of SiC whiskers on carbon/carbon composites prepared by CVD

被引：60

作者：

Fu, QG ^{[1
]}

Li, HJ ^{[1
]}

Shi, XH ^{[1
]}

Li, KZ ^{[1
]}

Hu, ZB ^{[1
]}

Jian, W ^{[1
]}

机构：

[1] Northwestern Polytech Univ, CC Composites Technol Res Ctr, Xian 710072, Shaanxi, Peoples R China

来源：

MATERIALS LETTERS | 2005年 / 59卷 / 19-20期

基金：

中国国家自然科学基金;

关键词：

CVD; SiC whisker; microstructure; growth mechanism; carbon/carbon composites;

D O I：

10.1016/j.matlet.2005.02.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The SiC whiskers of good quality are expected to act as the reinforcing element in the ceramic coatings for C/C composites. Using CH3SiCl3(MTS) and H-2 as the precursors, SiC whiskers were prepared on the surface of C/C composites by chemical vapor deposition (CVD) at normal atmosphere pressure. XRD, SEM and TEM analyses show that the whiskers are beta-SiC structure and their diameters are several-hundred nanometers. With the descending MTS concentration in the depositing room, the purity of the as-prepared whiskers increases and the diameters of the whiskers decrease. The investigation of growth mechanism shows the CVD-SiC whiskers grown up by the vapor-solid (VS) growth process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2593 / 2597

页数：5

共 11 条

[1] Fabrication of silicon carbide whiskers and whisker-containing composite coatings without using a metallic catalyst [J].

Ahn, HS ;

Choi, DJ .

SURFACE & COATINGS TECHNOLOGY, 2002, 154 (2-3) :276-281

[2] WHISKER TOUGHENING - A COMPARISON BETWEEN ALUMINUM-OXIDE AND SILICON-NITRIDE TOUGHENED WITH SILICON-CARBIDE [J].

CAMPBELL, GH ;

RUHLE, M ;

DALGLEISH, BJ ;

EVANS, AG .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (03) :521-530

[3] A study of the crystal structure of a commercial β-SiC whisker by high-resolution TEM [J].

Geng, L ;

Zhang, J .

MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (2-3) :243-246

[4] DIRECT PYROLYSIS OF RAW RICE HUSKS FOR MAXIMIZATION OF SILICON-CARBIDE WHISKER FORMATION [J].

KRISHNARAO, RV ;

GODKHINDI, MM ;

MUKUNDA, PGI ;

CHAKRABORTY, M .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (11) :2869-2875

[5] The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites [J].

Lee, YJ ;

Hwang, SM ;

Choi, DJ ;

Park, SH ;

Kim, HD .

THIN SOLID FILMS, 2002, 420 :354-359

[6] Thermal shock behavior of SiC whisker reinforced Si3N4/BN fibrous monolithic ceramics [J].

Li, SQ ;

Huang, Y ;

Luo, YM ;

Wang, CA ;

Li, CW .

MATERIALS LETTERS, 2003, 57 (11) :1670-1674

[7] The field emission properties of silicon carbide whiskers grown by CVD [J].

Lim, DC ;

Ahn, HS ;

Choi, DJ ;

Wang, CH ;

Tomokage, H .

SURFACE & COATINGS TECHNOLOGY, 2003, 168 (01) :37-42

[8] Effect of a catalyst on the formation of SiC whiskers from polycarbosilane. Nickel ferrite as a catalyst [J].

Otoishi, S ;

Tange, Y .

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1999, 72 (07) :1607-1613

[9]

Wagner R.S., 1970, WHISKER TECHNOLOGY, P47

[10] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

WAGNER, RS ;

ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

← 1 2 →