Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

被引：51

作者：

Gatti, E. ^{[1
]}

Grilli, E. ^{[1
]}

Guzzi, M. ^{[1
]}

Chrastina, D. ^{[2
]}

Isella, G. ^{[2
]}

von Kaenel, H. ^{[2
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Sci Mat, L NESS, I-20126 Milan, Italy

[2] Politecn Milan, Dipartimento Fis, L NESS, I-22100 Como, Italy

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

ENERGY; SI;

D O I：

10.1063/1.3541782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to Gamma-type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3541782]

引用

页数：3

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