Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

被引：0

作者：

Li, Yao ^{[1
]}

Zhang, Jinfeng ^{[1
]}

Liu, Guipeng ^{[2
]}

Quan, Rudai ^{[1
]}

Duan, Xiaoling ^{[1
]}

Zhang, Jincheng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China

[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Gansu, Peoples R China

来源：

AIP ADVANCES | 2017年 / 7卷 / 10期

基金：

中国国家自然科学基金;

关键词：

SAPPHIRE SUBSTRATE; HETEROSTRUCTURES; SCATTERING; FILMS;

D O I：

10.1063/1.4985825

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and characterized by the lateral correlation length L, and the fluctuations of aluminum and indium mole fractions (Delta x and Delta y) independent to each other. The situation of alloy composition fluctuation is investigated in the following cases. Only x or y fluctuates, and both x and y fluctuate with equal/unequal amplitudes in the same/opposite direction. We find that the scattering with both x and y fluctuating in the same direction is the weakest, while x and y fluctuating in the opposite directions leads to the strongest scattering. This in nature stems from the disparity of the bandgap and polarization in AlInN, AlGaN and GaN. The effects of different parameters, such as x and y, Delta x and Delta y, L, and the thickness of AlxInyGa1-x-yN barrier layer d on the mobility are also studied. The model will in principle give a universal explanation to the effect of alloy composition fluctuation scattering on the carrier mobility in the GaN-based heterostructures with ternary or quaternary alloy barrier layers. (C) 2017 Author(s).

引用

页数：8

共 22 条

[1] Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment [J].

Ahmadi, Elaheh ;

Chalabi, Hamidreza ;

Kaun, Stephen W. ;

Shivaraman, Ravi ;

Speck, James S. ;

Mishra, Umesh K. .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)

[2] Electroluminescence observation of nanoscale phase separation in quaternary AlInGaN light-emitting diodes [J].

Cao, X. A. ;

Yang, Y. .

APPLIED PHYSICS LETTERS, 2010, 96 (15)

[3]

Hao Y., 2016, NITRIDE WIDE BANDGAP, P78

[4] Properties of GaN and related compounds studied by means of Raman scattering [J].

Harima, H .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) :R967-R993

[5] Lattice and energy band engineering in AlInGaN/GaN heterostructures [J].

Khan, MA ;

Yang, JW ;

Simin, G ;

Gaska, R ;

Shur, MS ;

zur Loye, HC ;

Tamulaitis, G ;

Zukauskas, A ;

Smith, DJ ;

Chandrasekhar, D ;

Bicknell-Tassius, R .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1161-1163

[6] InAlN/(In)GaN high electron mobility transistors:: some aspects of the quantum well heterostructure proposal [J].

Kuzmík, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (06) :540-544

[7] Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT [J].

Lecourt, Francois ;

Agboton, Alain ;

Ketteniss, Nico ;

Behmenburg, Hannes ;

Defrance, Nicolas ;

Hoel, Virginie ;

Kalisch, Holger ;

Vescan, Andrei ;

Heuken, Michael ;

De Jaeger, Jean-Claude .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) :978-980

[8] Alloy compositional fluctuation in InAlGaN epitaxial films [J].

Li, DB ;

Dong, X ;

Huang, J ;

Liu, X ;

Xu, Z ;

Zhang, Z ;

Wang, Z .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (03) :649-652

[9] Alloy disorder scattering limited mobility of two-dimensional electron gas in the quaternary AlInGaN/GaN heterojunctions [J].

Li, Yao ;

Zhang, Jinfeng ;

Wan, Wei ;

Zhang, Yachao ;

Nie, Yuhu ;

Zhang, Jincheng ;

Hao, Yue .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 67 :77-83

[10] Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors [J].

Lim, T. ;

Aidam, R. ;

Kirste, L. ;

Waltereit, P. ;

Quay, R. ;

Mueller, S. ;

Ambacher, O. .

APPLIED PHYSICS LETTERS, 2010, 96 (25)

← 1 2 3 →