Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures

被引：1

作者：

Chen, Q ^{[1
]}

Blasingame, M ^{[1
]}

Faber, C ^{[1
]}

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.121957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. (C) 1998 American Institute of Physics. [S0003-6951(98)04336-8].

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页码：1403 / 1405

页数：3

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