Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

被引：35

作者：

Mallick, Shubhrangshu ^{[1
]}

Banerjee, Koushik ^{[1
]}

Ghosh, Siddhartha ^{[1
]}

Plis, Elena ^{[2
]}

Rodriguez, Jean Baptiste ^{[2
]}

Krishna, Sanjay ^{[2
]}

Grein, Christoph ^{[3
]}

机构：

[1] Univ Illinois, ECE Dept, Lab Photonics & Magnet, Chicago, IL 60607 USA

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[3] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期

关键词：

D O I：

10.1063/1.2817608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p(+)-n(-)-n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics. (C) 2007 American Institute of Physics.

引用

页数：3

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