Elucidating Cu-glycine and BTA complexations in Cu-CMP using SIMS and XPS

被引：33

作者：

Deshpande, S ^{[1
]}

Kuiry, SC

Klimov, M

Seal, S

机构：

[1] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA

[2] Univ Cent Florida, Dept Mech Mat & Aerosp Engn, Orlando, FL 32816 USA

[3] Ctr Tribol Inc, Campbell, CA 95008 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 04期

关键词：

D O I：

10.1149/1.1869112

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The role of oxidants, complexing agents, and inhibitors in copper surface modification during Cu-chemical mechanical planarization (CMP) process was studied using secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The changes in the Cu surface chemistry in the presence of hydrogen peroxide, glycine, and benzotriazole (BTA) were investigated, with a special attention to the effect of pH, Cu-glycine-, and Cu-BTA-complex formations. The present investigation corroborates the earlier reported results of an increased copper dissolution in solution containing glycine and hydrogen peroxide, and a decreased removal rate of copper in the presence of benzotriazole due to the formation of a Cu-BTA polymeric film. (C) 2005 The Electrochemical Society.

引用

页码：G98 / G101

页数：4

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