Low resistance cathode metallization and die-bonding in silicon carbide p-n junction diodes

被引：4

作者：

Kim, Tae-Hong ^{[1
]}

Lee, Seung-Yong ^{[1
]}

Lee, Jang-Sub ^{[2
]}

Suh, Duk-, II ^{[1
]}

Cho, Nam-Kyu ^{[1
]}

Bahng, Wook ^{[3
]}

Kim, Nam-Kyun ^{[3
]}

Choi, Sung-Yong ^{[2
]}

Kim, Hak-Jong ^{[2
]}

Lee, Sang-Kwon ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju, South Korea

[2] SP Semicond & Commun Co Ltd, Puchon, South Korea

[3] Korea Electrotechnol res Inst, Power Sem Grp, Chang Won, South Korea

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

SiC p-n junction diodes; die-bonding; die-attaching; ohmic contacts; CMP;

D O I：

10.4028/www.scientific.net/MSF.556-557.717

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated how surface roughness, intentionally induced by chemical-mechanical polishing, affects the formation of ohmic contacts to an n-type 4H-SiC using a common circular transmission length method (CTLM). Nickel metal was used as the cathode ohmic contacts to n-type SiC. The specific contact resistance (SCR) for the un-polished sample (F I) and polished samples (F2 and F3) was 5.4 x 10(-3) Omega cm(2) and 4.2 x 10(-3) Qcm(2), respectively, We found out that the un-polished sample (F1) had much higher SCR than the samples, F2 and F3. In addition, we did not see any difference between the differently polished samples, F2 and F3, indicating that there was no dependence on the face type of SiC (Si- or C-face) in the values of SCR. We also investigated the die-bonding processes with the surface roughness and metallization schemes' effects.

引用

页码：717 / +

页数：2

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