Application and electronic structure of high-permittivity dielectrics

被引：57
作者：
Perevalov, T. V. [1 ]
Gritsenko, V. A. [1 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICS-USPEKHI | 2010年 / 53卷 / 06期
关键词：
ALTERNATIVE GATE DIELECTRICS; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; TITANIUM-DIOXIDE; BAND-STRUCTURE; THIN-FILMS; 1ST-PRINCIPLES CALCULATION; SILICON DIOXIDE; ALUMINUM-OXIDE; GAMMA-ALUMINA;
D O I：
10.3367/UFNe.0180.201006b.0587
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2, and TiO2.
引用
收藏
页码：561 / 575
页数：15
相关论文
共 99 条
[91]  
Wang X, 2006, IEEE T ELECTRON DEV, V53, P78
[92]  
Wolverton C., 2001, Physical Review B (Condensed Matter), V63, p024102/1, DOI 10.1103/PhysRevB.63.024102
[93]   SELF-CONSISTENT BAND STRUCTURES, CHARGE-DISTRIBUTIONS, AND OPTICAL-ABSORPTION SPECTRA IN MGO, ALPHA-AL2O3, AND MGAL2O4 [J].
XU, YN ;
CHING, WY .
PHYSICAL REVIEW B, 1991, 43 (05) :4461-4472
[94]   Preparation of epitaxial TiO2 films by pulsed laser deposition technique [J].
Yamamoto, S ;
Sumita, T ;
Sugiharuto ;
Miyashita, A ;
Naramoto, H .
THIN SOLID FILMS, 2001, 401 (1-2) :88-93
[95]  
Yeh JJ., 1993, Atomic calculation of photoionization Cross-Sections and asymmetry parameters
[96]   MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations [J].
Yeo, YC ;
King, TJ ;
Hu, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :1027-1035
[97]   THICKNESS AND EFFECTIVE ELECTRON MASS MEASUREMENTS FOR THIN SILICON DIOXIDE FILMS USING TUNNELING CURRENT OSCILLATIONS [J].
ZAFAR, S ;
CONRAD, KA ;
LIU, Q ;
IRENE, EA ;
HAMES, G ;
KUEHN, R ;
WORTMAN, JJ .
APPLIED PHYSICS LETTERS, 1995, 67 (07) :1031-1033
[98]   First-principles study of native point defects in hafnia and zirconia [J].
Zheng, J. X. ;
Ceder, G. ;
Maxisch, T. ;
Chim, W. K. ;
Choi, W. K. .
PHYSICAL REVIEW B, 2007, 75 (10)
[99]   Current transport in metal/hafnium oxide/silicon structure [J].
Zhu, WJ ;
Ma, TP ;
Tamagawa, T ;
Kim, J ;
Di, Y .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (02) :97-99
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