Application and electronic structure of high-permittivity dielectrics

被引：57

作者：

Perevalov, T. V. ^{[1
]}

Gritsenko, V. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICS-USPEKHI | 2010年 / 53卷 / 06期

关键词：

ALTERNATIVE GATE DIELECTRICS; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; TITANIUM-DIOXIDE; BAND-STRUCTURE; THIN-FILMS; 1ST-PRINCIPLES CALCULATION; SILICON DIOXIDE; ALUMINUM-OXIDE; GAMMA-ALUMINA;

D O I：

10.3367/UFNe.0180.201006b.0587

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2, and TiO2.

引用

页码：561 / 575

页数：15

共 99 条

[1] Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process [J].

Aarik, J ;

Aidla, A ;

Mändar, H ;

Uustare, T ;

Sammelselg, V .

THIN SOLID FILMS, 2002, 408 (1-2) :97-103

[2] Internal photoemission of electrons and holes from (100)Si into HfO2 [J].

Afanas'ev, VV ;

Stesmans, A ;

Chen, F ;

Shi, X ;

Campbell, SA .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1053-1055

[3] Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2 [J].

Afanas'ev, VV ;

Houssa, M ;

Stesmans, A ;

Heyns, MM .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3079-3084

[4] NONLOCAL PSEUDOPOTENTIALS IN MOLECULAR-DYNAMIC DENSITY-FUNCTIONAL THEORY - APPLICATION TO SIO2 [J].

ALLAN, DC ;

TETER, MP .

PHYSICAL REVIEW LETTERS, 1987, 59 (10) :1136-1139

[5] OPTICAL-PROPERTIES OF RUTILE NEAR ITS FUNDAMENTAL-BAND GAP [J].

AMTOUT, A ;

LEONELLI, R .

PHYSICAL REVIEW B, 1995, 51 (11) :6842-6851

[6] OPTICAL PROPERTIES OF ALUMINUM OXICE IN VACUUM ULTRAVIOLET [J].

ARAKAWA, ET ;

WILLIAMS, MW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (05) :735-&

[7] Electronic and optical properties of anatase TiO2 [J].

Asahi, R ;

Taga, Y ;

Mannstadt, W ;

Freeman, AJ .

PHYSICAL REVIEW B, 2000, 61 (11) :7459-7465

[8] ELECTRONIC-STRUCTURE OF ALUMINUM-OXIDE AS DETERMINED BY X-RAY PHOTOEMISSION [J].

BALZAROTTI, A ;

BIANCONI, A .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 76 (02) :689-694

[9]

BARTA IP, 1982, J PHYS C SOLID STATE, V15, P5399

[10]

BRYTOV IA, 1978, FIZ TVERD TELA+, V20, P664

← 1 2 3 4 5 6 7 8 9 10 →