Layout based radiation hardening techniques against single-event transient

被引:4
作者
Liang, Bin [1 ]
Luo, Deng [1 ]
Sun, Qian [1 ]
Chen, Wangyong [2 ]
机构
[1] Natl Univ Def Technol, Sch Comp Sci, Changsha 410073, Peoples R China
[2] Sun Yat Sen Univ, Sch Microelect Sci & Technol, Guangzhou 510006, Peoples R China
关键词
Single-event transient; Layout; Radiation hardening; Charge collection; DESIGN; SENSITIVITY;
D O I
10.1016/j.microrel.2022.114572
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The single-event transient (SET) is regarded as one of the critical reliability issues for the soft errors in modern circuit designs, especially at the advanced technology node. To improve the SET robustness of circuits applied in the space environment, two kinds of layout-based radiation hardening techniques, namely split active area (SAA), gapless well and source (GWS), are proposed to reduce the charge collection efficiency from vertical and horizontal direction respectively. The hardening efficiency of different layout configurations is investigated by TCAD simulations and the underlying reasons for pulse width mitigation of SET are elaborated. The results indicate the combination of the two layout techniques is highly recommended in the construction of hardened standard cell library.
引用
收藏
页数:6
相关论文
共 30 条
  • [1] Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients
    Aguiar, Y. Q.
    Wrobel, F.
    Autran, J. -L.
    Kastensmidt, F. L.
    Leroux, P.
    Saigne, F.
    Pouget, V.
    Touboul, A. D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (07) : 1581 - 1589
  • [2] Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells
    Aguiar, Y. Q.
    Wrobel, F.
    Guagliardo, S.
    Autran, J. -L.
    Leroux, P.
    Saigne, F.
    Touboul, A. D.
    Pouget, V.
    [J]. MICROELECTRONICS RELIABILITY, 2019, 100
  • [3] Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients
    Ahlbin, J. R.
    Atkinson, N. M.
    Gadlage, M. J.
    Gaspard, N. J.
    Bhuva, B. L.
    Loveless, T. D.
    Zhang, E. X.
    Chen, L.
    Massengill, L. W.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 2585 - 2590
  • [4] Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths
    Ahlbin, Jonathan R.
    Gadlage, Matthew J.
    Atkinson, Nicholas M.
    Narasimham, Balaji
    Bhuva, Bharat L.
    Witulski, Arthur F.
    Holman, W. Timothy
    Eaton, Paul H.
    Massengill, Lloyd W.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (03) : 401 - 406
  • [5] [Anonymous], 2020, SENT DEV UGUID
  • [6] Baumann R. C., 2001, IEEE Transactions on Device and Materials Reliability, V1, P17, DOI 10.1109/7298.946456
  • [7] Radiation-induced soft errors in advanced semiconductor technologies
    Baumann, RC
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) : 305 - 316
  • [8] Digital single event transient trends with technology node scaling
    Benedetto, J. M.
    Eaton, P. H.
    Mavis, D. G.
    Gadlage, M.
    Turflinger, T.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3462 - 3465
  • [9] DFF Layout Variations in CMOS SOI-Analysis of Hardening by Design Options
    Black, Jeffrey D.
    Black, Dolores A.
    Domme, Nicholas A.
    Dodd, Paul E.
    Griffin, Patrick J.
    Nowlin, R. Nathan
    Trippe, James M.
    Salas, Joseph G.
    Reed, Robert A.
    Weller, Robert A.
    Tonigan, Andrew M.
    Schrimpf, Ronald D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (06) : 1125 - 1132
  • [10] Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes
    Chen Jian-Jun
    Chi Ya-Qing
    Liang Bin
    [J]. CHINESE PHYSICS B, 2015, 24 (01)