A monolithically integrated micro-LED display based on GaN-on-silicon substrate

被引：25

作者：

Jung Hun, Choi ^{[1
]}

Lee, Seung Jun ^{[1
]}

Kwon, Kyu Oh ^{[1
]}

Choi, Jae Yong ^{[1
]}

Jung, Taeil ^{[1
]}

Han, Myungsoo ^{[1
]}

Han, Seung Jun ^{[1
]}

机构：

[1] LG Display, Display Res Ctr, Seoul 07796, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; HEMT;

D O I：

10.7567/1882-0786/ab64ff

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic micro-LED display technology is proposed using a gallium-nitride-on-silicon substrate. An active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with Si thin-film transistors (TFTs) as driving circuitries. MOS TFTs were fabricated on a Si surface which had been exposed after dry etching of the LED epitaxial layer. The mobility and sub-threshold slope were measured as 354.3 cm(2) V-1 s(-1) and 0.64 V dec(-1), respectively. A 150 pixel-per-inch 0.6 inch monolithic display was demonstrated with a 60 x 60 pixel array AM display by an integration technology on the same substrate.

引用

页数：4

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