A monolithically integrated micro-LED display based on GaN-on-silicon substrate

被引：25

作者：

Jung Hun, Choi ^{[1
]}

Lee, Seung Jun ^{[1
]}

Kwon, Kyu Oh ^{[1
]}

Choi, Jae Yong ^{[1
]}

Jung, Taeil ^{[1
]}

Han, Myungsoo ^{[1
]}

Han, Seung Jun ^{[1
]}

机构：

[1] LG Display, Display Res Ctr, Seoul 07796, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; HEMT;

D O I：

10.7567/1882-0786/ab64ff

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic micro-LED display technology is proposed using a gallium-nitride-on-silicon substrate. An active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with Si thin-film transistors (TFTs) as driving circuitries. MOS TFTs were fabricated on a Si surface which had been exposed after dry etching of the LED epitaxial layer. The mobility and sub-threshold slope were measured as 354.3 cm(2) V-1 s(-1) and 0.64 V dec(-1), respectively. A 150 pixel-per-inch 0.6 inch monolithic display was demonstrated with a 60 x 60 pixel array AM display by an integration technology on the same substrate.

引用

页数：4

共 22 条

[1]

Biwa Goshi, 2019, SID Symposium Digest of Technical Papers, V50, P121, DOI 10.1002/sdtp.12870

[2] Stretchable Active Matrix Inorganic Light-Emitting Diode Display Enabled by Overlay-Aligned Roll-Transfer Printing [J].

Choi, Minwoo ;

Jang, Bongkyun ;

Lee, Wonho ;

Lee, Seonwoo ;

Kim, Tae Woong ;

Lee, Hak-Joo ;

Kim, Jae-Hyun ;

Ahn, Jong-Hyun .

ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (11)

[3] III-nitride micro-emitter arrays: development and applications [J].

Fan, Z. Y. ;

Lin, J. Y. ;

Jiang, H. X. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (09)

[4] Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: Promising candidates for micro-displays and colour conversion [J].

Gong, Z. ;

Gu, E. ;

Jin, S. R. ;

Massoubre, D. ;

Guilhabert, B. ;

Zhang, H. X. ;

Dawson, M. D. ;

Poher, V. ;

Kennedy, G. T. ;

French, P. M. W. ;

Neil, M. A. A. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (09)

[5] Sacrificial etching of III-V compounds for micromechanical devices [J].

Hjort, K .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) :370-375

[6] Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition [J].

Hwang, David ;

Mughal, Asad J. ;

Wong, Matthew S. ;

Alhassan, Abdullah I. ;

Nakamura, Shuji ;

DenBaars, Steven P. .

APPLIED PHYSICS EXPRESS, 2018, 11 (01)

[7] Stretchable, Transparent Graphene Interconnects for Arrays of Microscale Inorganic Light Emitting Diodes on Rubber Substrates [J].

Kim, Rak-Hwan ;

Bae, Myung-Ho ;

Kim, Dae Gon ;

Cheng, Huanyu ;

Kim, Bong Hoon ;

Kim, Dae-Hyeong ;

Li, Ming ;

Wu, Jian ;

Du, Frank ;

Kim, Hoon-Sik ;

Kim, Stanley ;

Estrada, David ;

Hong, Suck Won ;

Huang, Yonggang ;

Pop, Eric ;

Rogers, John A. .

NANO LETTERS, 2011, 11 (09) :3881-3886

[8] Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD [J].

Liu, Zhao Jun ;

Huang, Tongde ;

Ma, Jun ;

Liu, Chao ;

Lau, Kei May .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) :330-332

[9] Transfer printing by kinetic control of adhesion to an elastomeric stamp [J].

Meitl, MA ;

Zhu, ZT ;

Kumar, V ;

Lee, KJ ;

Feng, X ;

Huang, YY ;

Adesida, I ;

Nuzzo, RG ;

Rogers, JA .

NATURE MATERIALS, 2006, 5 (01) :33-38

[10]

Nakamitsu Sho, 2019, SID Symposium Digest of Technical Papers, V50, P137, DOI 10.1002/sdtp.12874

← 1 2 3 →