Enhanced high-temperature electronic transport properties in nanostructured epitaxial thin films of the Lan+1NinO3n+1 Ruddlesden-Popper series (n=1, 2, 3, ∞)

被引:31
作者
Burriel, Monica
Garcia, Gemma
Rossell, Marta D.
Figueras, Albert
Van Tendeloo, Gustaaf
Santiso, Jose
机构
[1] CSIC, ICMAB, Bellaterra 08193, Spain
[2] UAB, Dept Fis, Grp Nanomat & Micorsistemas, Bellaterra 08193, Spain
[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
关键词
D O I
10.1021/cm070804e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial thin films of lanthanum nickel oxide Ruddlesden-Popper series (Lan+1NinO3n+1) have been prepared on different single-crystal substrates by metal organic chemical vapor deposition. Varying the La/Ni composition ratio in the precursor solution allows deposition of films with controlled La/Ni stoichiometry ranging between 1 and 2. Epitaxial La2NiO4 (n = 1) and LaNiO3 (n = infinity) pure phases were obtained for La/Ni close to 2 and 1, respectively. For intermediate La/Ni composition, films with a microstructure consisting of a disordered stacking of nanodomains with progressively increasing average n value were obtained. Similarly with bulk samples, the electronic conductivity of the nanostructured films increases with the measured average n value, opening the possibility to prepare new mixed ionic and electronic conducting nanocomposite thin films with tailored properties
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收藏
页码:4056 / 4062
页数:7
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