Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N,N′-bis(heptafluorobutyl)3,4:9,10-perylene diimide

被引:142
|
作者
Oh, Joon Hak
Liu, Shuhong
Bao, Zhenan
Schmidt, Ruediger
Wuerthner, Frank
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 95305 USA
[2] Univ Wurzburg, Inst Organ Chem, D-97074 Wurzburg, Germany
[3] Univ Wurzburg, Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2803073
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thin-film transistor characteristics of n-channel organic semiconductor, N,N-'-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72 cm(2) V-1 s(-1). The mobility only slightly decreased after exposure to air and remained stable for more than 50 days. Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability. (C) 2007 American Institute of Physics.
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