RuO2 doped SnO2 nanobipyramids on Si (100) as a field emitter

被引：7

作者：

Bhise, Ashok B. ^{[1
]}

Late, Dattatray J. ^{[1
]}

Ramgir, Niranjan S. ^{[2
]}

More, Mahendra A. ^{[1
]}

Mulla, Imtiaz S. ^{[2
]}

Pillai, Vijayamohanan K. ^{[2
]}

Joag, Dilip S. ^{[1
]}

机构：

[1] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Condensed Mat Phys, Pune 411007, Maharashtra, India

[2] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 18期

关键词：

field emitter; ruthenium oxide; tin oxide; doped semiconductor; field enhancement factor;

D O I：

10.1016/j.tsf.2007.12.160

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of RuO2: SnO2 nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0. 1 gA/ cm 2 current density has been found to be 0.2 V/mu m. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of I tA is observed to be good. Our field emission results on RuO2: SnO2 nanobipyramids indicate that, RuO2: SnO2 nanobipyramids are a potential candidate for futuristic field emission based devices. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：6388 / 6391

页数：4

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