Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C:H films

被引：2
|
作者：
Balachova, OV
Alves, MAR
Swart, JW
Braga, ES
Cescato, L
机构：
[1] Univ Estadual Campinas, Fac Engn Elect & Computacao, BR-13081970 Campinas, SP, Brazil
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 06期
关键词：
D O I：
10.1063/1.369681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous hydrogenated carbon a-C:H films were deposited on silicon and quartz substrates in a parallel plate reactor by radio frequency (rf) plasma-enhanced chemical vapor deposition. The deposition rates of the films have been studied in the low-frequency region of the electric field. The Si and quartz substrates of different thickness have been used. The rf and substrate thickness dependencies of the deposition rates are discussed in terms of a theory of ion bombardment. (C) 1999 American Institute of Physics. [S0021-8979(99)07506-4].
引用
收藏
页码：3345 / 3347
页数：3
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