Physical insights regarding design and performance of independent-gate FinFETs

被引：102

作者：

Zhang, WM ^{[1
]}

Fossum, JG

Mathew, L

Du, Y

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Freescale Semicond, Austin, TX 78721 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 10期

关键词：

double-gate (DG) FinFET; multiple independent-gate FinFET (MIGFET); RF mixer; threshold-voltage control;

D O I：

10.1109/TED.2005.856184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET [3], are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.

引用

页码：2198 / 2206

页数：9

共 16 条

[1] Linearity and low-noise performance of SOI MOSFETs for RF applications [J].

Adan, AO ;

Yoshimasu, T ;

Shitara, S ;

Tanba, N ;

Fukumi, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) :881-888

[2] Impact of poly-gate depletion on MOS RF linearity [J].

Choi, CH ;

Yu, ZP ;

Dutton, RW .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :330-332

[3] Speed superiority of scaled double-gate CMOS [J].

Fossum, JG ;

Ge, LX ;

Chiang, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) :808-811

[4]

FOSSUM JG, 2004, UFDG USERS GUIDE VER

[5]

Fried D. M., 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561), P24, DOI 10.1109/DRC.2001.937857

[6] High-performance p-type independent-gate FinFETs [J].

Fried, DM ;

Duster, JS ;

Kornegay, KT .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :199-201

[7] Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs [J].

Ge, LX ;

Fossum, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) :287-294

[8] Independently driven DG MOSFETs for mixed-signal circuits: Part II - Applications on cross-coupled feedback and harmonics generation [J].

Gen, P ;

Kan, ECC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) :2094-2101

[9] Double-gate CMOS: Symmetrical-versus asymmetrical-gate devices [J].

Kim, K ;

Fossum, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (02) :294-299

[10]

Lee T.H., 1998, DESIGN CMOS RADIO FR

← 1 2 →