Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

被引：3
|
作者：
Laney, DC [1 ]
Larson, LE [1 ]
Malinowski, J [1 ]
Harame, D [1 ]
Subbanna, S [1 ]
Volant, R [1 ]
Case, M [1 ]
Chan, P [1 ]
机构：
[1] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年
关键词：
D O I：
10.1109/BIPOL.1998.741889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results are presented on a set of microwave transmission line structures and planar inductors fabricated on a thick polyimide dielectric in a production Si/SiGe HBT technology using standard metallization. Microstrip transmission lines with characteristic impedances between 44 - 73 ohms, with losses at 10 GHz of 0.15 dB/mm and Q's between 10-14 are presented. Inductances between 0.5 - 15 nH with Q's up to 22 are also presented.
引用
收藏
页码：101 / 104
页数：4
相关论文
共 50 条
  • [1] Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process
    Laney, DC
    Larson, LE
    Chan, P
    Malinowski, J
    Harame, D
    Subbanna, S
    Volant, R
    Case, M
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (08) : 1507 - 1510
  • [2] Lateral microwave transformers and inductors implemented in a Si SiGe HBT process
    Laney, DC
    Larson, LE
    Chan, P
    Malinowski, J
    Harame, D
    Subbanna, S
    Volant, R
    Case, M
    1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 855 - 858
  • [3] Wafer level packaging technology for low-loss on-chip transmission lines and inductors
    Carchon, G
    Sun, X
    De Raedt, W
    Beyne, E
    2003 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, 2003, 5288 : 167 - 172
  • [4] Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates
    Burghartz, JN
    Edelstein, DC
    Jenkins, KA
    Kwark, YH
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (10) : 1961 - 1968
  • [5] On determining the characteristic impedance of low-loss transmission lines
    Post, JE
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 47 (02) : 176 - 180
  • [6] The Research on Process Technology of SiGe/Si HBT
    Jia Sumei
    Yang Ruixia
    CEIS 2011, 2011, 15
  • [7] New fabrication process for low-loss millimeter-wave transmission lines on silicon
    Ishii, Hiromu
    Sahri, Nabil
    Nagatsuma, Tadao
    Machida, Katsuyuki
    Saito, Kunio
    Yagi, Shouji
    Yano, Masaki
    Kudo, Kazuhisa
    Kyuragi, Hakaru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 1982 - 1986
  • [8] A new fabrication process for low-loss millimeter-wave transmission lines on silicon
    Ishii, H
    Sahri, N
    Nagatsuma, T
    Machida, K
    Saito, K
    Yagi, S
    Yano, M
    Kudo, K
    Kyuragi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 1982 - 1986
  • [9] Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
    Larson, L
    Case, M
    Rosenbaum, S
    Rensch, D
    MacDonald, P
    Matloubian, M
    Chen, M
    Harame, D
    Malinowski, J
    Meyerson, B
    Gilbert, M
    Maas, S
    1996 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 1996, 39 : 80 - 81
  • [10] A low-loss thermal isolator for waveguides and coaxial transmission lines
    Davidovitz, M
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (01): : 25 - 27
12345