The radio spectrum of Si3

被引：5
|
作者：
McCarthy, MC
Thaddeus, P
机构：
[1] Harvard Smithsonian Ctr Astrophys, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
ASTROPHYSICAL JOURNAL | 2003年 / 592卷 / 02期
关键词：
ISM : molecules; line : identification; molecular data; molecular processes; radio lines : ISM;
D O I：
10.1086/375728
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The silicon trimer Si-3 and several of its rare isotopic species have been detected in the laboratory, and the frequencies of 66 rotational transitions in the range 5 - 42 GHz have been measured to a few parts in 10(7). The most intense radio lines can be calculated from the derived spectroscopic constants to better than 3 km s(-1) in equivalent radial velocity up to frequencies of 50 GHz, adequate for a deep search in the best astronomical sources; above that frequency the uncertainties increase to of the order of 20 km s(-1) at 160 GHz, which is still sufficient for a deep search in a wide-line source such as IRC + 10216.
引用
收藏
页码：L91 / L93
页数：3
相关论文
共 50 条
  • [11] PHYS 222-Electronic spectra of the Si3 and NO3 radicals
    Stanton, John F.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2006, 232
  • [12] THE SI=SI3 DEFECT AT VARIOUS (111)SI/SIO2 AND (111)SI/SI3N4 INTERFACES
    STESMANS, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1000 - 1011
  • [13] Accurate multi-reference study of Si3 electronic manifold
    Goncalves, C. E. M.
    Galvao, B. R. L.
    Braga, J. P.
    THEORETICAL CHEMISTRY ACCOUNTS, 2016, 135 (05)
  • [14] Synthesis and Properties of Monocrystalline Al(As1-xPx)Si3 Alloys on Si(100)
    Grzybowski, G.
    Watkins, T.
    Beeler, R. T.
    Jiang, L.
    Smith, D. J.
    Chizmeshya, A. V. G.
    Kouvetakis, J.
    Menendez, J.
    CHEMISTRY OF MATERIALS, 2012, 24 (12) : 2347 - 2355
  • [15] La induced Si3 trimer monolayer on Si(111) surface: an ab initio study
    Yang, Guang
    Chai, Jun-Shuai
    Xu, Li-Fang
    Wang, Jian-Tao
    NEW JOURNAL OF PHYSICS, 2021, 23 (12):
  • [16] Thermal behavior of the Au/c -Si3 N4 /Si (111) interface
    Flammini, Roberto
    Wiame, Fŕd´ric
    Belkhou, Rachid
    Taleb-Ibrahimi, Amina
    Spezzani, Carlo
    Moras, Paolo
    Crotti, Corrado
    Journal of Applied Physics, 2008, 103 (08):
  • [17] STUDY BY TEM OF THE V5 SI3/V3 SI ORIENTED EUTECTIC INTERPHASE INTERFACE
    BENLAMINE, A
    STADELMANN, P
    SENATEUR, JP
    REYNAUD, F
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1986, 11 (05): : 325 - 343
  • [18] Research on the properties of PECVD Si3 N4/InP interface
    Li, Xiangmin
    Wang, Cunrang
    Cheng, Jun
    Hou, Xun
    Liu, Ying
    Guangzi Xuebao/Acta Photonica Sinica, 1994, 23 (02):
  • [19] THE ELECTRONIC-STRUCTURE OF SI3 AND GE3 IN THE LOCAL DENSITY FUNCTIONAL APPROXIMATION
    DIXON, DA
    GOLE, JL
    CHEMICAL PHYSICS LETTERS, 1992, 188 (5-6) : 560 - 564
  • [20] APPLICATION OF STATISTICAL EXPERIMENT TO THE DEPOSITION OF SI3 N4 IN MICROELECTRONICS TECHNOLOGY
    CASAS, EC
    LEAL, MCA
    FANTOBA, ML
    BALLART, CC
    HORNA, CD
    DOCON, ELT
    MESTRES, FS
    ANALES DE QUIMICA, 1991, 87 (04): : 439 - 444
12345