Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 μm

被引：12

作者：

Cerutti, L. ^{[1
]}

Ducanchez, A. ^{[1
]}

Grech, P. ^{[1
]}

Garnache, A. ^{[1
]}

Genty, F. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5214, IES,CC 067, F-34095 Montpellier, France

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 03期

关键词：

D O I：

10.1049/el:20083424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An all-epitaxial monolithic vertical cavity surface emitting laser grown on GaSb substrate is presented. The structure is composed of two n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and a tunnel junction. Quasi continuous-wave laser operation is demonstrated at 2.3 mu m up to room temperature. Threshold current densities of 0.8 and 0.6 kA/cm(2) are obtained at 300 and 280 K for 80 mu m-diameter devices (1 mu s pulses, 10% duty cycle). A peak output optical power of 2 mW was achieved at 280 K.

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收藏

页码：203 / 204

页数：2

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