Generic incubation law for laser damage and ablation thresholds

被引:92
作者
Sun, Zhanliang [1 ]
Lenzner, Matthias [2 ]
Rudolph, Wolfgang [1 ]
机构
[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[2] Lenzner Res LLC, Tucson, AZ 85704 USA
关键词
FEMTOSECOND; PULSES; METALS; DIELECTRICS; SURFACES; ACCUMULATION; MORPHOLOGY; BREAKDOWN; BEHAVIOR; FLUENCE;
D O I
10.1063/1.4913282
中图分类号
O59 [应用物理学];
学科分类号
摘要
In multi-pulse laser damage and ablation experiments, the laser-induced damage threshold (LIDT) usually changes with the number of pulses in the train, a phenomenon known as incubation. We introduce a general incubation model based on two physical mechanisms-pulse induced change of (i) absorption and (ii) critical energy that must be deposited to cause ablation. The model is applicable to a broad class of materials and we apply it to fit data for dielectrics and metals. It also explains observed changes of the LIDT as a function of the laser repetition rate. We discuss under which conditions the crater-size method to determine LIDTs can be applied in multi-pulse experiments. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 33 条
[1]   Surface damage threshold and structuring of dielectrics using femtosecond laser pulses: the role of incubation [J].
Ashkenasi, D ;
Lorenz, M ;
Stoian, R ;
Rosenfeld, A .
APPLIED SURFACE SCIENCE, 1999, 150 (1-4) :101-106
[2]   Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate [J].
Baudach, S ;
Bonse, J ;
Krüger, J ;
Kautek, W .
APPLIED SURFACE SCIENCE, 2000, 154 :555-560
[3]   What is laser conditioning? A review focused on dielectric multilayers [J].
Bercegol, H .
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1998, 1999, 3578 :421-426
[4]   Femtosecond pulse laser processing of TiN on silicon [J].
Bonse, J ;
Rudolph, P ;
Krüger, J ;
Baudach, S ;
Kautek, W .
APPLIED SURFACE SCIENCE, 2000, 154 (154) :659-663
[5]   Ultra-short pulse laser ablation of metals: threshold fluence, incubation coefficient and ablation rates [J].
Byskov-Nielsen, Jeppe ;
Savolainen, Juha-Matti ;
Christensen, Martin Snogdahl ;
Balling, Peter .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 101 (01) :97-101
[6]   Wavelength dependence of laser-induced damage: Determining the damage initiation mechanisms [J].
Carr, CW ;
Radousky, HB ;
Demos, SG .
PHYSICAL REVIEW LETTERS, 2003, 91 (12)
[7]   Numerical investigation of ultrashort laser damage in semiconductors [J].
Chen, JK ;
Tzou, DY ;
Beraun, JE .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (3-4) :501-509
[8]   Influence of defects on extreme ultraviolet laser ablation of LiF [J].
Cherednikov, Yaroslav ;
Inogamov, Nail A. ;
Urbassek, Herbert M. .
PHYSICAL REVIEW B, 2013, 88 (13)
[9]  
Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637
[10]   Near-damage threshold femtosecond laser irradiation of dielectric surfaces: desorbed ion kinetics and defect dynamics [J].
Costache, Florenta ;
Eckert, Sebastian ;
Reif, Juergen .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 92 (04) :897-902