A low-noise fully-differential CMOS preamplifier for neural recording applications

被引:12
作者
Zhang Xu [1 ]
Pei WeiHua [1 ]
Huang BeiJu [1 ]
Guan Ning [1 ]
Chen HongDa [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
基金
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词
neural signal amplifier; low noise; low power; subthreshold circuit design; noise efficiency factor (NEF); AMPLIFIER; CIRCUIT;
D O I
10.1007/s11432-011-4333-5
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A fully-differential bandpass CMOS preamplifier for extracellular neural recording is presented in this paper. The capacitive-coupled and capacitive-feedback topology is adopted. We describe the main noise sources of the proposed preamplifier and discuss the methods for achieving the lowest input-referred noise. The preamplifier has a midband gain of 43 dB and a DC gain of 0. The -3 dB upper cut-off frequency of the preamplifier is 6.8 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 3.36 mu Vrms integrated from 1 Hz to 6.8 kHz for recording the local field potentials (LFPs) and the mixed neural spikes with a power dissipation of 24.75 mu W from 3.3 V supply. When the passband is configured as 100 Hz-6.8 kHz for only recording spikes, the noise is measured to be 3.01 mu Vrms. The 0.115 mm(2) prototype chip is designed and fabricated in 0.35-mu m N-well CMOS (complementary metal oxide semiconductor) 2P4M process.
引用
收藏
页码:441 / 452
页数:12
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