Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structures

被引：8
作者：
Herrmann, KH
Tomm, JW
Al-Otaibi, H
机构：
[1] Max Born Inst Nichtlineare Optik & Kurrzeit Spekt, D-12474 Berlin, Germany
[2] Kuwait Univ, Dept Phys, Kuwait 13060, Kuwait
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 03期
关键词：
D O I：
10.1088/0268-1242/14/3/015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The steady-state equilibrium of photoexcited carrier population in quantum wells (QWs) in GaAs/GaAlAs graded index (GRIN) structures was studied by polarization dependent photocurrent analysis. The carrier escape energy was determined separately for polarized excitation parallel (TE) and perpendicular (TM) to the epitaxial sequence from an Arrhenius plot of the photocurrent magnitude. For that purpose either the spectrum was recorded for each temperature or the spectral feature related to the process of interest was tracked while the temperature was varied. Carrier escape of holes through the light hole band dominates the escape. Nonradiative pair recombination within the well and carrier escape by tunnelling are further loss processes.
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收藏
页码：293 / 297
页数：5
相关论文
共 16 条
[1]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[2]   Electron transport in a short Al0.265Ga0.735As/GaAs superlattice [J].
Bishop, PJ ;
Daniels, ME ;
Ridley, BK .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (05) :482-487
[3]   SIMULTANEOUS MEASUREMENT OF ELECTRON AND HOLE ESCAPE TIMES FROM BIASED SINGLE QUANTUM-WELLS [J].
CAVAILLES, JA ;
MILLER, DAB ;
CUNNINGHAM, JE ;
WA, PLK ;
MILLER, A .
APPLIED PHYSICS LETTERS, 1992, 61 (04) :426-428
[4]   ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES [J].
CHELLES, S ;
FERREIRA, R ;
VOISIN, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (01) :105-109
[5]   CARRIER ESCAPE MECHANISMS FROM GAAS/ALXGA1-XAS MULTIPLE-QUANTUM WELLS IN AN ELECTRIC-FIELD [J].
FOX, AM ;
ISPASOIU, RG ;
FOXON, CT ;
CUNNINGHAM, JE ;
JAN, WY .
APPLIED PHYSICS LETTERS, 1993, 63 (21) :2917-2919
[6]   TUNABLE SUPERLATTICE P-I-N PHOTODETECTORS - CHARACTERISTICS, THEORY, AND APPLICATIONS [J].
LARSSON, A ;
ANDREKSON, PA ;
ENG, ST ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (05) :787-801
[7]   QUANTUM-WELL INFRARED PHOTODETECTORS [J].
LEVINE, BF .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81
[8]  
MADELUNG O, 1982, LANDOLTBORNSTEIN A, V17
[9]  
MARGARITONDO G, 1988, PESPECTIVES CONDENSE, V1, P9
[10]   MODELING THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT, EXTERNAL DIFFERENTIAL EFFICIENCY AND LASING WAVELENGTH IN QW LASER-DIODES [J].
MENZEL, U ;
BARWOLFF, A ;
ENDERS, P ;
ACKERMANN, D ;
PUCHERT, R ;
VOSS, M .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) :1382-1392
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