Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

被引：6

作者：

Arapov, Yu. G. ^{[1
]}

Gudina, S. V. ^{[1
]}

Neverov, V. N. ^{[1
]}

Podgornykh, S. M. ^{[1
]}

Popov, M. R. ^{[1
]}

Harus, G. I. ^{[1
]}

Shelushinina, N. G. ^{[1
]}

Yakunin, M. V. ^{[1
]}

Dvoretsky, S. A. ^{[2
]}

Mikhailov, N. N. ^{[2
]}

机构：

[1] Russian Acad Sci, MN Miheev Inst Met Phys, Ural Branch, Ekaterinburg, Russia

[2] Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Div, Novosibirsk, Russia

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2016年 / 185卷 / 5-6期

基金：

俄罗斯基础研究基金会;

关键词：

Nanostructures; Quantum wells; Quantum Hall effect; Variable-range hopping conductivity; Localization length; LOCALIZATION LENGTH; TRANSPORT; ELECTRON; WELLS; QUANTIZATION; TRANSITIONS; PERCOLATION; INSULATOR; SYSTEMS; BAND;

D O I：

10.1007/s10909-016-1477-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.

引用

页码：665 / 672

页数：8

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