Microwave PECVD system for SiNx:H antireflection coatings and hydrogen passivation on multicrystalline silicon

被引：0
|
作者：
Fourmond, E
Lemiti, M
Trassy, C
Laugier, A
机构：
[1] Inst Natl Sci Appl, UMR 5511, Lab Phys Mat, F-69621 Villeurbanne, France
[2] ENSHMG, EPM, F-38402 St Martin Dheres, France
来源：
HIGH TEMPERATURE MATERIAL PROCESSES | 2003年 / 7卷 / 02期
关键词：
PECVD; silicon nitride; microwave; solar cells;
D O I：
10.1615/HighTempMatProc.v7.i2.130
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon nitride layers (SiNx:H) are widely used in the photovoltaics field as antireflection coating and to passivate multicrystalline silicon solar cells. With this aim, we have developed a plasma-assisted chemical vapour deposition reactor using microwave remote plasma (2.45 GHz). Effect of gas flow rate, microwave power and substrate temperature on the layers is presented. Refractive index varies between 1.7 to 3 in the sample as grown, with a deposition rate up to 40 nm/min. The temperature was observe to have no influence on the deposition rate, and the optical properties of the layers are very stable towards rapid thermal annealing at high temperature (850degreesC). This is attributed to the low hydrogen content of the layers, as revealed by FTIR analysis.
引用
收藏
页码：231 / 240
页数：10
相关论文
共 50 条
  • [21] Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride
    Duerinckx, F
    Szlufcik, J
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 231 - 246
  • [22] Hydrogen passivation of defects in multicrystalline silicon solar cells
    Martinuzzi, S
    Périchaud, I
    Warchol, F
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 80 (03) : 343 - 353
  • [23] Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells
    Remache, L.
    Fourmond, E.
    Mahdjoub, A.
    Dupuis, J.
    Lemiti, M.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (01): : 45 - 48
  • [24] Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells
    Saenger, M. F.
    Sun, J.
    Schaedel, M.
    Hilfiker, J.
    Schubert, M.
    Woollam, J. A.
    THIN SOLID FILMS, 2010, 518 (07) : 1830 - 1834
  • [25] Optimisation of SiNx:H layer for multicrystalline silicon solar cells
    Lipinski, M
    Zieba, P
    Jonas, S
    Kluska, S
    Sokolowski, M
    Czternastek, H
    OPTO-ELECTRONICS REVIEW, 2004, 12 (01) : 41 - 44
  • [26] Double-layered silicon nitride antireflection coatings for multicrystalline silicon solar cells
    Liu, Bingfa
    Qiu, Shenyu
    Chen, Nan
    Du, Guoping
    Sun, Jie
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (03) : 1014 - 1021
  • [27] Grain Boundary Passivation in Multicrystalline Silicon Using Hydrogen Sulfide
    Saha, Arunodoy
    Zhang, Haifeng
    Sun, Wen-Cheng
    Tao, Meng
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (07) : P186 - P189
  • [28] Properties of silicon nanoparticles embedded in SiNx deposited by microwave-PECVD
    Delachat, F.
    Carrada, M.
    Ferblantier, G.
    Grob, J-J
    Slaoui, A.
    NANOTECHNOLOGY, 2009, 20 (41)
  • [29] Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si
    Dekkers, H. F. W.
    De Wolf, S.
    Agostinelli, G.
    Duerinckx, F.
    Beaucarne, G.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) : 3244 - 3250
  • [30] Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon
    Darwiche, S.
    Nikravech, M.
    Morvan, D.
    Amouroux, J.
    Ballutaud, D.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (2-3) : 195 - 200
12345