Lack of charge offset drift is a robust property of Si single electron transistors

被引：13

作者：

Hourdakis, Emmanouel ^{[1
]}

Wahl, Jeremy A. ^{[1
]}

Zimmerman, Neil M. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2841659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One of the challenges that single-electron transistors (SETs) face before they can be considered technologically useful is the charge offset drift. Recently, two different types of Si SETs were shown to have a drift of only 0.01e (the fundamental charge) over several days. Those devices came from one fabrication source. Here, we present the results for Si SETs fabricated by our group (a different source) demonstrating their operation as SETs. We confirm that the charge offset drift is less than 0.01e, demonstrating the lack of charge offset drift is generic to Si devices and not dependent on the fabrication source. (c) 2008 American Institute of Physics.

引用

页数：3

共 12 条

[1] Quantum noise in the Josephson charge qubit [J].

Astafiev, O ;

Pashkin, YA ;

Nakamura, Y ;

Yamamoto, T ;

Tsai, JS .

PHYSICAL REVIEW LETTERS, 2004, 93 (26)

[2] Hole transport in coupled SiGe quantum dots for quantum computation [J].

Cain, PA ;

Ahmed, H ;

Williams, DA .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :346-350

[3] Electron transport in nanocrystalline Si based single electron transistors [J].

Dutta, A ;

Oda, S ;

Fu, Y ;

Willander, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B) :4647-4650

[4] Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor [J].

Fujiwara, A ;

Inokawa, H ;

Yamazaki, K ;

Namatsu, H ;

Takahashi, Y ;

Zimmerman, NM ;

Martin, SB .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[5]

Grabert H., 1992, Single Charge Tunneling

[6]

HEINZEL T, 2003, MESOCOPIC ELECT SOLI, P237

[7]

HORI T, 1997, GATE DIELECTRIC MOS

[8]

Huber W. H., 2001, EXPT IMPLEMENTATION, V76

[9]

Keller MW, 2001, P INT SCH PHYS, V146, P291

[10] Demonstration of a silicon-based quantum cellular automata cell [J].

Mitic, M. ;

Cassidy, M. C. ;

Petersson, K. D. ;

Starrett, R. P. ;

Gauja, E. ;

Brenner, R. ;

Clark, R. G. ;

Dzurak, A. S. ;

Yang, C. ;

Jamieson, D. N. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

← 1 2 →