Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

In this work, heterojunction of InSb/InP was grown by liquid phase epitaxy (LPE). Surface morphology and crystalline structure of the heterojunction were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The frequency and temperature dependences of a.c. conductivity and dielectric properties of the heterojunctions were investigated in the ranges of 100 kHz-5 MHz and 298-628 K, respectively. The a.c. conductivity and its frequency exponents were interpreted in terms of correlated barrier hopping model (CBH), as the dominant conduction mechanism for charge carrier transport. The calculated activation energy, from the Arrhenius plot, was found to decrease with increasing frequency. Experimental results of both dielectric constant epsilon(1) and dielectric loss epsilon(2) showed a remarkable dependence of both frequency and temperature.