Unrelaxed vacancy formation energies in group-IV elements calculated by the full-potential linear muffin-tin orbital method: Invariance with crystal structure

被引:66
作者
Le Bacq, O [1 ]
Willaime, F
Pasturel, A
机构
[1] CEA Saclay, Rech Met Phys Sect, F-91191 Gif Sur Yvette, France
[2] CNRS, Lab Phys Numer Syst Complexes, F-38042 Grenoble, France
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 13期
关键词
D O I
10.1103/PhysRevB.59.8508
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The unrelaxed vacancy formation energies have been calculated for group-IV elements (Ti, Zr, Hf) in the hexagonal close packed (hcp) and body centered cubic (bcc) structures within the local density approximation to the density functional theory using the full-potential linear muffin-tin orbital method. In hcp-Hf the calculated value of 2.37 eV is in excellent agreement with the experimental value of 2.45+/-0.2 eV. The results found in hcp-Ti and hcp-Zr, i.e., 2.14 eV and 2.07 eV, respectively, can therefore be considered as reliable predictions. In the more open bcc structure, after very conclusive validations of the present procedure in Mo and W by comparison with experiments and other ab initio calculations, vacancy formation energies of 2.2-2.4 eV are obtained in Ti, Zr, and Hf. These energies, which are very similar to those in the hcp structure, are significantly larger than the experimental activation energies for self-diffusion in the bce structure. Assuming that the monovacancy mechanism is dominant in beta-Ti,beta-Zr, and beta-Hf, this demonstrates that structural relaxations with particularly large amplitudes are expected around the vacancy. [S0163-1829(99)00313-6].
引用
收藏
页码:8508 / 8515
页数:8
相关论文
共 53 条
[41]   SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS [J].
PERDEW, JP ;
ZUNGER, A .
PHYSICAL REVIEW B, 1981, 23 (10) :5048-5079
[42]   VACANCY-FORMATION ENERGIES AT THE (111) SURFACE AND IN BULK AL, CU, AG, AND RH [J].
POLATOGLOU, HM ;
METHFESSEL, M ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1993, 48 (03) :1877-1883
[43]   MODEL FOR ANOMALOUS SELF-DIFFUSION IN GROUP-IVB TRANSITION-METALS [J].
SANCHEZ, JM ;
FONTAINE, DD .
PHYSICAL REVIEW LETTERS, 1975, 35 (04) :227-230
[44]  
Satta A, 1998, MATER RES SOC SYMP P, V481, P189
[45]   Vacancy self-diffusion parameters in tungsten: Finite electron-temperature LDA calculations [J].
Satta, A ;
Willaime, F ;
de Gironcoli, S .
PHYSICAL REVIEW B, 1998, 57 (18) :11184-11192
[46]   Charge redistribution at Pd surfaces: Ab initio grounds for tight-binding interatomic potentials [J].
Sawaya, S ;
Goniakowski, J ;
Mottet, C ;
Saul, A ;
Treglia, G .
PHYSICAL REVIEW B, 1997, 56 (19) :12161-12166
[47]   MIGRATION ENTHALPIES IN FCC AND BCC METALS [J].
SCHOBER, HR ;
PETRY, W ;
TRAMPENAU, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (47) :9321-9338
[48]   DEFECT PARAMETERS OF B.C.C. METALS - GROUP-SPECIFIC TRENDS [J].
SCHULTZ, H .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 141 (02) :149-167
[49]  
Simmons G., 1971, SINGLE CRYSTAL ELAST
[50]  
Villars P., 1985, PEARSONS HDB CRYSTAL