Low temperature deposition of cerium dioxide film by chemical reaction

被引：25

作者：

Izaki, M

Saito, T

Chigane, M

Ishikawa, M

Katayama, J

Inoue, M

Yamashita, M

机构：

[1] Osaka Municipal Tech Res Inst, Dept Inorgan Chem, Joto Ku, Osaka 5368553, Japan

[2] Doshisya Univ, Fac Engn, Kyotanabe, Kyoto 6400321, Japan

[3] Okuno Chem Ind Co Ltd, Tsurumi Ku, Osaka 5380044, Japan

[4] Toyohashi Univ Technol, Dept Elect & Elect Engn, Aichi 4418580, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2001年 / 11卷 / 08期

关键词：

D O I：

10.1039/b104358g

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A cerium dioxide (CeO2) film with characteristic cubic lattice and optical band gap energy has been deposited chemically onto a non-conductive glass substrate at 333 K by simple immersion into an aqueous solution containing hydrous cerium(III) nitrate and dimethylamineborane (DMAB).

引用

页码：1972 / 1974

页数：3

共 17 条

[1]

ADACHI G, 1999, SCI RARE EARTHS, P871

[2] Studies of the formation of cerium-rich protective films using x-ray absorption near-edge spectroscopy and rotating disk electrode methods [J].