共 50 条
- [31] MEASUREMENT AND CALCULATION OF SIH2 RADICAL DENSITY IN SIH4 AND SI2H6 PLASMA FOR THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4239 - 4246
- [32] Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-2x2 -: art. no. 174703 JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (17):
- [33] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09): : 4867 - 4872
- [34] Ab Initio Chemical Kinetic Study for Reactions of H Atoms with SiH4 and Si2H6: Comparison of Theory and Experiment JOURNAL OF PHYSICAL CHEMISTRY A, 2010, 114 (01): : 633 - 639
- [35] SELECTIVE DISSOCIATIVE IONIZATION OF SIH4, SI2H6 AND SI3H8 BY ELECTRON-IMPACT IN SUPERSONIC FREE JETS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (6B): : L879 - L882
- [37] TOTAL AND PARTIAL ELECTRON COLLISIONAL IONIZATION CROSS-SECTIONS FOR CH4, C2H6, SIH4, AND SI2H6 JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (04): : 1770 - 1777
- [39] Growth of SiC on Si substrates with C2H4 and Si2H6 Applied Surface Science, 1999, 148 (03): : 189 - 195