New modalities of strain-control of ferroelectric thin films

被引:116
作者
Damodaran, Anoop R. [1 ]
Agar, Joshua C. [1 ]
Pandya, Shishir [1 ]
Chen, Zuhuang [1 ,2 ]
Dedon, Liv [1 ]
Xu, Ruijuan [1 ]
Apgar, Brent [1 ]
Saremi, Sahar [1 ]
Martin, Lane W. [1 ,2 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
ferroelectrics; thin films; epitaxy; strain; DOMAIN-WALL MOTION; ENHANCED ELECTROMECHANICAL RESPONSE; DEGENERATE ELECTRONIC STATES; BARIUM STRONTIUM-TITANATE; EPITAXIAL BATIO3 FILMS; PHASE-TRANSITIONS; PIEZOELECTRIC PROPERTIES; LEAD-FREE; NEGATIVE CAPACITANCE; SINGLE-CRYSTALS;
D O I
10.1088/0953-8984/28/26/263001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.
引用
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页数:36
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