Unipolar Switching in Pt/GeSexTe1-x/Pt

被引：5

作者：

Jeong, Doo Seok ^{[1
]}

Son, Seo Hee ^{[1
,2
]}

Lee, Suyoun ^{[1
]}

Cheong, Byung-Ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Elect Mat Ctr, Seoul 136791, South Korea

[2] Univ Sci & Technol, Taejon 305333, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 12期

关键词：

D O I：

10.1149/1.3501971

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report unipolar switching in amorphous GeSexTe1-x of varying Se content (x) sandwiched between Pt top and bottom electrodes. After the initialization process, termed electroforming, repeatable unipolar switching was observed. We investigated the effect of the Se to Te ratio on the unipolar switching as well as on the electroforming voltage and the resistance of the as-electroformed state, which showed increases in the electroforming voltage and the resistance of the as-electroformed state with increasing Se content. Some phenomenological evidences of unipolar switching, which cannot be explained by means of the conventional phase-change effect, are reported. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3501971] All rights reserved.

引用

页码：G111 / G113

页数：3

共 16 条

[1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].

ADLER, D ;

SHUR, MS ;

SILVER, M ;

OVSHINSKY, SR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309

[2]

Blachnik R., 1972, THERMOCHIM ACTA, V3, P317

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] Materials science - Changing face of the chameleon [J].

Greer, AL ;

Mathur, N .

NATURE, 2005, 437 (7063) :1246-1247

[5] Impedance spectroscopy of TiO2 thin films showing resistive switching [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Waser, Rainer .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[6] Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Breuer, Uwe ;

Waser, Rainer .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)

[7] Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio [J].

Jeong, Jeung-Hyun ;

Lee, Hyun Seok ;

Lee, Suyoun ;

Lee, Taek Sung ;

Kim, Won Mok ;

Zhe, Wu ;

Kim, Seul Cham ;

Oh, Kyu Hwan ;

Cheong, Byung-Ki .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (03)

[8] Improvement of resistive memory switching in NiO using IrO2 [J].

Kim, D. C. ;

Lee, M. J. ;

Ahn, S. E. ;

Seo, S. ;

Park, J. C. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[9] Nanoscale memory elements based on solid-state electrolytes [J].

Kozicki, MN ;

Park, M ;

Mitkova, M .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) :331-338

[10]

Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/NNANO.2009.456, 10.1038/nnano.2009.456]

← 1 2 →