Epitaxially grown flat MnSi ultrathin film on Si(111)

被引：10

作者：

Higashi, Shougo ^{[1
]}

Ikedo, Yuichi ^{[1
]}

Kocan, Pavel ^{[1
,2
]}

Tochihara, Hiroshi ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mol & Mat Sci, Kasuga, Fukuoka 8168580, Japan

[2] Charles Univ Prague, Dept Surface & Plasma Sci, Fac Math & Phys, CR-18000 Prague 8, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 01期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2952495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Flat MnSi ultrathin films are epitaxially grown on the Si(111)- (7 X 7) surface by Mn - deposition and subsequent annealing. Low-energy electron diffraction exhbits the brightest (root 3 X root 3)R30 degrees patterns when Mn atoms are deposited at similar to 3 ML with subsequent annealing at 250 degrees C. Scanning tunneling microscopy shows that atomically flat MnSi(111) surfaces with the (root 3 X root 3)R30 degrees periodicity are formed under above condition, and that the thickness of the flat MnSi films is similar to 7 angstrom. The results support a recent theoretical prediction of flat-film formation of the B20-type MnSi on the Si(111) surface. (C) 2008 American Institute of Physics.

引用

页数：3

共 16 条

[1] AES and STM investigations of room temperature Mn deposition onto Si(111) at different deposition rates [J].

Azatyan, S ;

Hirai, A ;

Kusaka, M ;

Iwami, M .

APPLIED SURFACE SCIENCE, 2004, 237 (1-4) :105-109

[2] Mn clusters on Si(111) surface: STM investigation [J].

Azatyan, SG ;

Iwami, M ;

Lifshits, VG .

SURFACE SCIENCE, 2005, 589 (1-3) :106-113

[3] Manganese silicide single crystal and films deposited on Si(111): A comparative spectroscopic study [J].

Carleschi, E. ;

Magnano, E. ;

Zangrando, M. ;

Bondino, F. ;

Nicolaou, A. ;

Carbone, F. ;

Van der Marel, D. ;

Parmigiani, F. .

SURFACE SCIENCE, 2007, 601 (18) :4066-4073

[4] Epitaxial growth of manganese on silicon: Volmer-Weber growth on the Si(111) surface [J].

Evans, MMR ;

Glueckstein, JC ;

Nogami, J .

PHYSICAL REVIEW B, 1996, 53 (07) :4000-4004

[5] Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(001), studied by LEED [J].

Higashi, S ;

Ohshima, T ;

Mizurio, S ;

Tochihara, H .

SURFACE SCIENCE, 2006, 600 (03) :591-597

[6] Epitaxy of Mn on Si(001): Adsorption, surface diffusion, and magnetic properties studied by density-functional theory [J].

Hortamani, Mahbube ;

Wu, Hua ;

Kratzer, Peter ;

Scheffler, Matthias .

PHYSICAL REVIEW B, 2006, 74 (20)

[7] Density-functional study of Mn monosilicide on the Si(111) surface: Film formation versus island nucleation [J].

Hortamani, Mahbube ;

Kratzer, Peter ;

Scheffler, Matthias .

PHYSICAL REVIEW B, 2007, 76 (23)

[8] Thin manganese films on Si(111)-(7x7): electronic structure and strain in silicide formation [J].

Kumar, A ;

Tallarida, M ;

Hausmann, M ;

Starke, U ;

Horn, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (07) :1083-1090

[9] Morphology of ultrathin manganese silicide on Si(111) [J].

Nagao, T ;

Ohuchi, S ;

Matsuoka, Y ;

Hasegawa, S .

SURFACE SCIENCE, 1999, 419 (2-3) :134-143

[10] In situ characterization of Mn and Fe silicide islands on silicon [J].

Tanaka, M ;

Zhang, Q ;

Takeguchi, M ;

Furuya, K .

SURFACE SCIENCE, 2003, 532 :946-951

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