Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells

被引：37

作者：

Vermang, B. ^{[1
,2
]}

Goverde, H. ^{[3
]}

Uruena, A. ^{[2
]}

Lorenz, A. ^{[2
]}

Cornagliotti, E. ^{[2
]}

Rothschild, A. ^{[2
]}

John, J. ^{[2
]}

Poortmans, J. ^{[2
]}

Mertens, R. ^{[2
]}

机构：

[1] Katholieke Univ Leuven ESAT, PV SCT ISC, B-3001 Heverlee, Belgium

[2] IMEC, B-3001 Heverlee, Belgium

[3] Eindhoven Univ Technol Tu e, NL-5600 MB Eindhoven, Netherlands

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 101卷

关键词：

Si; PERC; Local Al BSF; Surface passivation; Atomic layer deposition; Al2O3;

D O I：

10.1016/j.solmat.2012.01.032

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Random Al back surface field (BSF) p-type Si solar cells are presented, where a stack of Al2O3 and SiNx is used as rear surface passivation layer containing blisters. It is shown that no additional contact opening step is needed, since during co-firing local Al BSFs are induced at the location of these blisters. The best fill factors and short circuit currents are obtained in the case of (i) a hydrophobic pre-passivation cleaning, since it leads to a small density of larger blisters, and (ii) 10 nm of Al2O3, where the blistering size still increases during firing thanks to additional out-gassing. There is an apparent gain in J(SC) and V-OC of, respectively, 1.3 mA/cm(2) and 5 mV for the best random Al BSF cells compared to full Al BSF reference cells, because of better rear internal reflection and rear surface passivation. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：204 / 209

页数：6

共 21 条

[1] Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J].

Agostinelli, G. ;

Delabie, A. ;

Vitanov, P. ;

Alexieva, Z. ;

Dekkers, H. F. W. ;

De Wolf, S. ;

Beaucarne, G. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3438-3443

[2]

Agostinelli G., 2005, P 20 EUR PHOT SOL EN, P942

[3]

Biiscke T., P 37 IEEE P IN PRESS

[4]

Debucquoy M., 2010, Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and the 5th World Conference on Photovoltaic Energy Conversion, P381

[5] Atomic Layer Deposition: An Overview [J].

George, Steven M. .

CHEMICAL REVIEWS, 2010, 110 (01) :111-131

[6]

Gielis JJH, 2008, J APPL PHYS, V104

[7] Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 [J].

Hoex, B. ;

Schmidt, J. ;

Bock, R. ;

Altermatt, P. P. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[8]

Hoex B., 2008, J APPL PHYS, V104

[9]

Huster F., 2005, 20 EU PVSEC, P1466

[10]

Kania D., 2010, Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and the 5th World Conference on Photovoltaic Energy Conversion, P2292

← 1 2 3 →