A 3-D integral equation-based approach to the analysis of real-life MMICs-Application to microelectromechanical systems

被引：22

作者：

Farina, M ^{[1
]}

Rozzi, T ^{[1
]}

机构：

[1] Univ Ancona, Dipartimento Elettron & Automat, I-60131 Ancona, Italy

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 12期

关键词：

MEMS; method of moments; MMICs; switches;

D O I：

10.1109/22.971605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we introduce a three-dimensional method-of-moments approach, suitable for the analysis of real-life monolithic circuits for microwaves/millimeter waves. It shares the flexibility and the efficiency of the currently available spectral-domain commercial simulators, while allowing all metallizations to have finite thickness and finite conductivity and the ability to handle dielectric discontinuities. The method is successfully applied to several structures, like metal-insulator-metal capacitor, spiral inductors, and microelectromechanical capacitive switches in the 1-50-GHz frequency range.

引用

页码：2235 / 2240

页数：6

共 16 条

[11] High-isolation CPW MEMS shunt switches - Part 1: Modeling [J].

Muldavin, JB ;

Rebeiz, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (06) :1045-1052

[12] High-isolation CPW MEMS shunt switches - Part 2: Design [J].

Muldavin, JB ;

Rebeiz, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (06) :1053-1056

[13] AN ELECTROMAGNETIC TIME-HARMONIC ANALYSIS OF SHIELDED MICROSTRIP CIRCUITS [J].

RAUTIO, JC ;

HARRINGTON, RF .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (08) :726-730

[14]

ROZZI T, 1999, ADV ELECTROMAGNETIC

[15] Electrodynamic analysis of combined microstrip and coplanar/slotline structures with 3-D components based on a surface/volume integral-equation approach [J].

Vaupel, T ;

Hansen, V .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (09) :1788-1800

[16] Physical modeling of spiral inductors on silicon [J].

Yue, CP ;

Wong, SS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) :560-568

← 1 2 →