Dialkali-Metal Monochalcogenide Semiconductors with High Mobility and Tunable Magnetism

被引:23
作者
Hua, Chenqiang [1 ,2 ]
Sheng, Feng [1 ]
Hu, Qifeng [1 ]
Xu, Zhu-An [1 ,3 ]
Lu, Yunhao [2 ]
Zheng, Yi [1 ,3 ]
机构
[1] Zhejiang Univ, Dept Phys, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
美国国家科学基金会;
关键词
FERROMAGNETISM; CRYSTAL;
D O I
10.1021/acs.jpclett.8b02859
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, transition-metal chalcogenides, and black phosphorus. Here, we report a new, large family of semiconducting dialkali-metal monochalcogenides (DMMCs) with an inherent A(2)X monolayer (ML) structure, in which two alkali sub-MLs form hexagonal close packing and sandwich the triangular chalcogen atomic plane. Such a unique lattice leads to extraordinary physical properties, such as good dynamical and thermal stability, visible to near-infrared energy gap, and high electron mobility. Most strikingly, DMMC MLs host extended van Hove singularities near the valence band (VB) edge, readily accessible by moderate hole doping within 1.0 x 10(13) cm(-2). Upon critical doping, DMMC MLs undergo spontaneous ferromagnetic transition when the top VBs become fully spin-polarized by strong exchange interactions. Such 2D gate tunable magnetism are promising for exploring novel device concepts in spintronics, electronics and optoelectronics.
引用
收藏
页码:6695 / 6701
页数:13
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