Extremely Uniform Tunnel Barriers for Low-Cost Device Manufacture

被引:13
|
作者
Missous, Mohamed [1 ]
Kelly, Michael J. [2 ]
Sexton, James [1 ]
机构
[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
[2] Univ Cambridge, Dept Engn, Ctr Adv Photon & Elect, Cambridge CB1 1EG, England
关键词
Semiconductors; tunnel devices; molecular beam epitaxy; manufacture;
D O I
10.1109/LED.2015.2427335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.
引用
收藏
页码:543 / 545
页数:3
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