Progress in Organic Crystal Transistors for High-Performance Organic Electronics

被引:0
作者
Takeya, J. [1 ]
Uemura, T. [1 ]
Uno, M. [1 ]
Yamagishi, M. [1 ]
Tominari, Y. [1 ]
机构
[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
来源
PHYSICS AND TECHNOLOGY OF ORGANIC SEMICONDUCTOR DEVICES | 2010年 / 1115卷
关键词
THIN-FILM TRANSISTORS; N-TYPE; GATE DIELECTRICS; SEMICONDUCTORS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report our recent progresses for the maximum field-effect performances with the use of organic crystal semiconductors. Air-stable high-mobility n-type transistors are developed with single crystals of electron affine organic molecular compounds. To achieve higher device performances with p-type high-mobility organic single crystals, transistors with solid-to-liquid interfaces are structured in combination with ionic liquids. Forming the electric double layers at the boundaries of the ionic-liquid electrolyte, high-density carriers are accumulated with minimum gate voltage, so that the highest transconductance is realized. We also developed three-dimensional (3D) transistors enabling very high current density per pixel area, to prepare for realizing high-power devices with densely self-placed organic microcrystals.
引用
收藏
页码:77 / 82
页数:6
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