A Compact Model for Transition Metal Dichalcogenide Field Effect Transistors with Effects of Interface Traps

被引：1

作者：

Xu, Yifei

Li, Weisheng

Fan, Dongxu

Sh, Yi

Qiu, Hao ^{[1
]}

Wang, Xinran ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

中国国家自然科学基金;

关键词：

compact model; field effect transistor (FET); interface traps; MoS2; transition metal dichalcogenide (TMD);

D O I：

10.1109/EDTM50988.2021.9420973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We presented a compact model for transition metal dichalcogenide (TMD) field effect transistors (FETs) by considering the indispensable effects of interface traps. By simplifying the energy distribution of interface traps, a large amount of numerical calculations in previously published models can be avoided. At the same time, our model provides a good fit to the experimental results. The proposed converging and accurate model is suitable for efficient circuit explorations for the future complex systems based on TMD FETs.

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页数：3

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